GROWTH OF A ࢋࢀࢊ࡯ LAYER ON A SILICON SUBSTRATE AND STUDY OF THE ELECTROPHYSICAL PROPERTIES OF THE CREATED HETEROSTRUCTURE AND ITS EFFECT ON HUMIDITY

Authors

  • Sapayev Bayramdurdi, Yuldashev Kadirjon Abdumutalib, Pulatov Akhrorbek Akmal, Obitov Doniyorbek Davronbek Author

Keywords:

materials science, semiconductor, fundamental

Abstract

This article is about semiconductor materials science, Si- The issues of creating heterostructures based on a cadmium telluride film and obtaining contacts to the created system are considered. The morphology of the obtained coatings, the amount of elements in the coating, their distribution, and the size of polycrystalline particles were studied using modern devices. The change in the voltage-ampere characteristics of the obtained structure depending on the moisture content was studied.

Author Biography

  • Sapayev Bayramdurdi, Yuldashev Kadirjon Abdumutalib, Pulatov Akhrorbek Akmal, Obitov Doniyorbek Davronbek

    Professor of Alfraganus University, Ph.D.
    Teacher of Namangan State Technical University
    Student of Namangan State Technical University
    Student of Namangan State Technical University

References

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5. I.B. Sapaev, Sh.A. Mirsagatov and B. Sapaev. The fabrication and investigation of n/CdSp/CdTe-n/Si// Applied Solar Energy (English translation of Geliotekhnika). 2011. № 4, pp.31-35

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Published

2026-03-29

How to Cite

GROWTH OF A ࢋࢀࢊ࡯ LAYER ON A SILICON SUBSTRATE AND STUDY OF THE ELECTROPHYSICAL PROPERTIES OF THE CREATED HETEROSTRUCTURE AND ITS EFFECT ON HUMIDITY. (2026). Universal International Scientific Journal, 3(3.1), 749-753. https://universaljournal.uz/index.php/uxij/article/view/304