GROWTH OF A ࢋࢀࢊ࡯ LAYER ON A SILICON SUBSTRATE AND STUDY OF THE ELECTROPHYSICAL PROPERTIES OF THE CREATED HETEROSTRUCTURE AND ITS EFFECT ON HUMIDITY. UXIJ [Internet]. 2026 Mar. 29 [cited 2026 Jun. 4];3(3.1):749-53. Available from: https://universaljournal.uz/index.php/uxij/article/view/304