“GROWTH OF A ࢋࢀࢊ࡯ LAYER ON A SILICON SUBSTRATE AND STUDY OF THE ELECTROPHYSICAL PROPERTIES OF THE CREATED HETEROSTRUCTURE AND ITS EFFECT ON HUMIDITY”, UXIJ, vol. 3, no. 3.1, pp. 749–753, Mar. 2026, Accessed: Jun. 04, 2026. [Online]. Available: https://universaljournal.uz/index.php/uxij/article/view/304