“GROWTH OF A ࢋࢀࢊ࡯ LAYER ON A SILICON SUBSTRATE AND STUDY OF THE ELECTROPHYSICAL PROPERTIES OF THE CREATED HETEROSTRUCTURE AND ITS EFFECT ON HUMIDITY” (2026) Universal International Scientific Journal, 3(3.1), pp. 749–753. Available at: https://universaljournal.uz/index.php/uxij/article/view/304 (Accessed: 4 June 2026).