GROWTH OF A ࢋࢀࢊ࡯ LAYER ON A SILICON SUBSTRATE AND STUDY OF THE ELECTROPHYSICAL PROPERTIES OF THE CREATED HETEROSTRUCTURE AND ITS EFFECT ON HUMIDITY. Universal International Scientific Journal, [S. l.], v. 3, n. 3.1, p. 749–753, 2026. Disponível em: https://universaljournal.uz/index.php/uxij/article/view/304. Acesso em: 4 jun. 2026.