GROWTH OF A ࢋࢀࢊ࡯ LAYER ON A SILICON SUBSTRATE AND STUDY OF THE ELECTROPHYSICAL PROPERTIES OF THE CREATED HETEROSTRUCTURE AND ITS EFFECT ON HUMIDITY. (2026). Universal International Scientific Journal, 3(3.1), 749-753. https://universaljournal.uz/index.php/uxij/article/view/304