GROWTH OF A ࢋࢀࢊ࡯ LAYER ON A SILICON SUBSTRATE AND STUDY OF THE ELECTROPHYSICAL PROPERTIES OF THE CREATED HETEROSTRUCTURE AND ITS EFFECT ON HUMIDITY. UXIJ. 2026;3(3.1):749-753. Accessed June 4, 2026. https://universaljournal.uz/index.php/uxij/article/view/304